2.5 Gb/s APD
Model number: APD60T-XS
APD60T-XS is a top-illuminated, high speed avalanche photodiode chip with a dual pad layout and an optical aperture of 60 um. The APD is optimized for single-mode Gigabit Passive Optical Networks (GPON) and 2.7 Gb/s SONET/SDH telecom applications. A key feature of this innovative APD is low excess noise, -35 dBm for 2.5 Gb/s NRZ signals when used with an appropriate TIA.
Features:
- Top illuminated 2.5 Gb/s avalanche photodiode
- Enables a receiver sensitivity of –35 dBm with commercially available TIAs
- Large optical aperture of 60 μm
- Low capacitance: 350 fF
- Low operating bias: 23 V
- Operating temperature range: -40 to 85 °C
- Low temperature dependence of breakdown voltage of only 22mV/°C
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New! APD32T-XS
New! APD32T-XS
APD32T-XS is a top-illuminated, high speed avalanche photodiode chip with a dual pad layout and an optical aperture of 32 µm. The APD is optimized for single-mode 10 Gb/s SONET/SDH telecom applications, as well as 10G Passive Optical Networks (10G PON). A key feature of this innovative APD is low excess noise, enabling receiver sensitivities of -27 dBm for 10 Gb/s signals when used with an appropriate TIA.
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2.5 Gb/s APD
2.5 Gb/s APD
APD60T-XS is a top-illuminated, high speed avalanche photodiode chip with a dual pad layout and an optical aperture of 60 um. The APD is optimized for single-mode Gigabit Passive Optical Networks (GPON) and 2.7 Gb/s SONET/SDH telecom applications. A key feature of this innovative APD is low excess noise, -35 dBm for 2.5 Gb/s NRZ signals when used with an appropriate TIA.
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2.5 Gb/s APD
2.5 Gb/s APD
APD85B-XS is a bottom-illuminated, high speed avalanche photodiode chip with a dual pad layout and an optical aperture of 85 um. The APD is optimized for single-mode Gigabit Passive Optical Networks (GPON) and 2.7 Gb/s SONET/SDH telecom applications. A key feature of this innovative APD is low excess noise, -35 dBm for 2.5 Gb/s NRZ signals when used with an appropriate TIA.